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• W4285021810 abstract "For several 3D integration schemes, such as CoD2W and solder based D2W bonding, the thermal budget needs to be well below 250 °C due to the presence of temporary bonding materials. In this paper we present a new PECVD SiCN layer deposited at 175 °C and optimized for W2W bonding applications. The layer provides void-free W2W bonding interface characterized by high bond strength even at a relatively low (200 °C) post bond annealing temperature, enabling extreme thinning of the bonded stack. Moreover, it has been verified that the layer can withstand post bond annealing processes up to 350 °C without inducing the appearance of bonding voids." @default.
• W4285021810 created "2022-07-12" @default.
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• W4285021810 date "2022-05-01" @default.
• W4285021810 modified "2023-09-30" @default.
• W4285021810 title "Direct Bonding Using Low Temperature SiCN Dielectrics" @default.
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• W4285021810 doi "https://doi.org/10.1109/ectc51906.2022.00101" @default.
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