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• W4285110701 startingPage "584" @default.
• W4285110701 abstract "In this research, we investigated the effect of Hf inter layer and chemical oxide on Si(100) substrate on the ferroelectric undoped HfO2 deposition. In case with 1 nm-thick Hf inter layer, equivalent oxide thickness (EOT) was decreased from 6.0 to 4.8 nm for 10 nm-thick HfO2 with decreasing annealing temperature. In case with 0.5 nm-thick chemical oxide, EOT was decreased from 3.9 to 3.6 nm in MFS diodes for 5 nm-thick HfO2. The MFSFET was fabricated with 10 nm-thick HfO2 utilizing Hf inter layer. The subthreshold swing was improved from 240 mV/dec. to 120 mV/dec. and saturation mobility was increased from 70 cm2/(Vs) to 140 cm2/(Vs) by inserting Hf inter layer." @default.
• W4285110701 created "2022-07-14" @default.
• W4285110701 creator A5082026740 @default.
• W4285110701 creator A5082298405 @default.
• W4285110701 creator A5090919175 @default.
• W4285110701 date "2022-10-01" @default.
• W4285110701 modified "2023-10-18" @default.
• W4285110701 title "The Effect of Inter Layers on the Ferroelectric Undoped HfO₂ Formation" @default.
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• W4285110701 doi "https://doi.org/10.1587/transele.2021fup0004" @default.
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