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• W4285126302 endingPage "1028" @default.
• W4285126302 startingPage "1025" @default.
• W4285126302 abstract "In this letter, we demonstrate a GaN-based E/D-mode (Enhancement/Depletion-mode) inverter with PEALD-AlN (Plasma Enhanced Atomic Layer Deposition) and LPCVD-SiN (Low Pressure Chemical Vapor Deposition) as bilayer gate dielectric, where the E-mode GaN-MISHEMT is fabricated based on our proposed self-terminating gate recess etching technique. The combination of the two dielectrics makes the device exhibits high gate swing and low dielectric/III-V interface state densities. So that the fabricated inverter shows a large logic swing, high temperature stability and low hysteresis effect." @default.
• W4285126302 created "2022-07-14" @default.
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• W4285126302 date "2022-07-01" @default.
• W4285126302 modified "2023-10-16" @default.
• W4285126302 title "Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs With AlN/SiN Bilayer Dielectric" @default.
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• W4285126302 doi "https://doi.org/10.1109/led.2022.3180049" @default.
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