FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4285129175> ?p ?o ?g. }

• W4285129175 endingPage "1431" @default.
• W4285129175 startingPage "1428" @default.
• W4285129175 abstract "In this letter, a high-performance dual-function device fabricated using one single SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> resistive switching layer is demonstrated. The SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer is sandwiched between Ag and n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -Si to form an Ag/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -Si dual-function device with memory and selector features. As a memory device, it shows a high memory window of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> , and can continually operate over 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> cycles. Nonvolatility and stability are examined using a retention and a stress test for 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> s. Measurement at 85°C is performed to further confirm the reliability of the memory feature. As a selector, the device shows an extremely low leakage current of 0.1 pA, a high selectivity of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> , and a low turn-on energy consumption of 0.93 pJ. Moreover, it has steep turn-on and turn-off switching slopes of 1.7 mV/decade and 0.7 mV/decade. The reliability of the selector feature is confirmed by pulse operations and a stress test." @default.
• W4285129175 created "2022-07-14" @default.
• W4285129175 creator A5008356242 @default.
• W4285129175 creator A5058189217 @default.
• W4285129175 date "2022-09-01" @default.
• W4285129175 modified "2023-10-01" @default.
• W4285129175 title "Dual-Function Device Fabricated Using One Single SiO₂ Resistive Switching Layer" @default.
• W4285129175 cites W1895189654 @default.
• W4285129175 cites W1992677737 @default.
• W4285129175 cites W2585561899 @default.
• W4285129175 cites W2611008499 @default.
• W4285129175 cites W2621525036 @default.
• W4285129175 cites W2736698914 @default.
• W4285129175 cites W2793352651 @default.
• W4285129175 cites W2796567823 @default.
• W4285129175 cites W2801328573 @default.
• W4285129175 cites W2801578543 @default.
• W4285129175 cites W2808106868 @default.
• W4285129175 cites W2888200632 @default.
• W4285129175 cites W2963167114 @default.
• W4285129175 cites W2999821913 @default.
• W4285129175 cites W3003800662 @default.
• W4285129175 cites W3005641474 @default.
• W4285129175 cites W3012905579 @default.
• W4285129175 cites W3016611424 @default.
• W4285129175 cites W3022214422 @default.
• W4285129175 cites W3091890034 @default.
• W4285129175 cites W3196254728 @default.
• W4285129175 doi "https://doi.org/10.1109/led.2022.3189212" @default.
• W4285129175 hasPublicationYear "2022" @default.
• W4285129175 type Work @default.
• W4285129175 citedByCount "5" @default.
• W4285129175 countsByYear W42851291752022 @default.
• W4285129175 countsByYear W42851291752023 @default.
• W4285129175 crossrefType "journal-article" @default.
• W4285129175 hasAuthorship W4285129175A5008356242 @default.
• W4285129175 hasAuthorship W4285129175A5058189217 @default.
• W4285129175 hasConcept C14036430 @default.
• W4285129175 hasConcept C154945302 @default.
• W4285129175 hasConcept C41008148 @default.
• W4285129175 hasConcept C78458016 @default.
• W4285129175 hasConcept C86803240 @default.
• W4285129175 hasConceptScore W4285129175C14036430 @default.
• W4285129175 hasConceptScore W4285129175C154945302 @default.
• W4285129175 hasConceptScore W4285129175C41008148 @default.
• W4285129175 hasConceptScore W4285129175C78458016 @default.
• W4285129175 hasConceptScore W4285129175C86803240 @default.
• W4285129175 hasFunder F4320322795 @default.
• W4285129175 hasIssue "9" @default.
• W4285129175 hasLocation W42851291751 @default.
• W4285129175 hasOpenAccess W4285129175 @default.
• W4285129175 hasPrimaryLocation W42851291751 @default.
• W4285129175 hasRelatedWork W2130043461 @default.
• W4285129175 hasRelatedWork W2350741829 @default.
• W4285129175 hasRelatedWork W2358668433 @default.
• W4285129175 hasRelatedWork W2376932109 @default.
• W4285129175 hasRelatedWork W2382290278 @default.
• W4285129175 hasRelatedWork W2390279801 @default.
• W4285129175 hasRelatedWork W2748952813 @default.
• W4285129175 hasRelatedWork W2899084033 @default.
• W4285129175 hasRelatedWork W3098582471 @default.
• W4285129175 hasRelatedWork W2530322880 @default.
• W4285129175 hasVolume "43" @default.
• W4285129175 isParatext "false" @default.
• W4285129175 isRetracted "false" @default.
• W4285129175 workType "article" @default.