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• W4285131302 abstract "In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.53</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.47</sub> As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism implemented in SILVACO Atlas TCAD quantum simulation package to closely mimic the actual device physics, together with the judicious choice of the material parameters, models, and suitable discretization of the associated epitaxial layer structure. The validity of the approach was proved by comparing simulated data with experimental measurements resulting from fabricated micrometer-sized RTD devices featuring two different epitaxially grown layer stacks. Our results show that the simulation software can correctly compute the peak current density <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${J} _{p}$ </tex-math></inline-formula> , peak voltage <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V} _{p}$ </tex-math></inline-formula> , and the valley-to-peak voltage difference <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$Delta {V}$ </tex-math></inline-formula> = <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V} _{v} - {V} _{p}$ </tex-math></inline-formula> associated with the negative differential resistance (NDR) region of the RTD heterostructure static current density–voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${J}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> ) characteristic at room temperature (RT), all of which are key parameters in the design of these devices for use in oscillator circuits. We believe that this work will now help in optimizing the RTD epitaxial structure to maximize its radio-frequency (RF) power performance, accelerating developments in the rapidly evolving RTD technology for emerging applications, including next-generation ultra-broadband short-range wireless communication links and high-resolution imaging systems." @default.
• W4285131302 created "2022-07-14" @default.
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• W4285131302 date "2022-08-01" @default.
• W4285131302 modified "2023-09-26" @default.
• W4285131302 title "Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes" @default.
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• W4285131302 doi "https://doi.org/10.1109/ted.2022.3178360" @default.
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