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- W4285137851 abstract "Thin film solar cell technology based on kesterite materials Cu2ZnSn(S,Se)4 has been developed during the last decade as a promising solution in the field of low‐cost, sustainable, and environmental‐friendly photovoltaic technologies. However, the current performance of these solar cells is not satisfactory even after numerous efforts to boost kesterite solar cells performance. Some issues in this technology need to be addressed such as presence of varieties of defects and structural inhomogeneities across the interface which leads dominant recombination pathways. Proper band alignment at the absorber–buffer (p–n) junction interface, another important issue which could lead efficient charge separation and extraction and mitigate the voltage loss and achieve high power conversion efficiency. These interface-related concerns have drawn the scientific community toward interface engineering and modification of the interface to boost the performance of the kesterite solar cells. In this chapter, we have discussed some critical aspects of interface engineering of the absorber–buffer heterojunction in CZTSSe solar cells and the importance of strategies to examine the root causes of low efficiency. Finally, we have proposed some future research directions of heterojunction engineering toward the ideal interface in kesterite solar cells." @default.
- W4285137851 created "2022-07-14" @default.
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- W4285137851 date "2022-01-01" @default.
- W4285137851 modified "2023-09-27" @default.
- W4285137851 title "Absorber-buffer interface engineering for kesterite CZTS(Se) solar cells: Wide bandgap buffer layers and postsulfurization treatment" @default.
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- W4285137851 doi "https://doi.org/10.1016/b978-0-323-99860-4.00003-4" @default.
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