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• W4285138653 abstract "GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping effects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave." @default.
• W4285138653 created "2022-07-14" @default.
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• W4285138653 date "2022-10-01" @default.
• W4285138653 modified "2023-10-16" @default.
• W4285138653 title "A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications" @default.
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• W4285138653 doi "https://doi.org/10.1587/transele.2022mmi0006" @default.
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