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• W4285141168 abstract "In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical insights and design guidelines for the operation of FTJs as multilevel synaptic devices." @default.
• W4285141168 created "2022-07-14" @default.
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• W4285141168 date "2022-07-01" @default.
• W4285141168 modified "2023-09-27" @default.
• W4285141168 title "Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation" @default.
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• W4285141168 doi "https://doi.org/10.1109/ted.2022.3175684" @default.
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