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• W4285143842 abstract "To achieve high and uniform phosphorus (P) dopant concentration (more than <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$1times 10^{{20}}$ </tex-math></inline-formula> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−3</sup> ) near the germanium (Ge) surface, H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma treatment and modified plasma-assisted delta doping (MPADD) process are proposed and investigated. Sufficient vacancies are formed on the Ge surface using H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma treatment. Consequently, P and vacancies are uniformly included inside during Ge growth through the MPADD process. After the annealing, phosphorus-vacancy-oxygen (PVO) clusters with the lowest binding energy are formed. Therefore, the migration activation energy increases, and the dopant diffusion into the substrate is reduced. As a result, the surface P dopant concentration ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$4times 10^{{21}}$ </tex-math></inline-formula> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−3</sup> ) improves, and a uniform P concentration of approximately 5 nm is from the Ge surface. These results show that the MPADD process enables a uniform and high surface doping concentration of recently promising Ge materials and compensates for the disadvantages of conventional delta doping, such as long process time and the need for an ultra-high vacuum system." @default.
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• W4285143842 date "2022-08-01" @default.
• W4285143842 modified "2023-10-01" @default.
• W4285143842 title "High and Uniform Phosphorus Doping in Germanium Through a Modified Plasma Assisted Delta Doping Process With H₂ Plasma Treatment" @default.
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• W4285143842 doi "https://doi.org/10.1109/led.2022.3182730" @default.
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