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- W4285144707 endingPage "3205" @default.
- W4285144707 startingPage "3199" @default.
- W4285144707 abstract "We studied nitrogen (N) incorporation effects on the electrical characteristics of SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> fabricated by plasma-enhanced atomic layer deposition (PEALD). To determine whether N could be incorporated into the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , nitrous oxide (N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O) plasma with different plasma powers (100, 150, and 200 W) was used during the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> deposition, and the film properties were compared with SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> fabricated using a conventional oxygen (O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) plasma reactant. Compared to the O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma reactant, the hard breakdown is improved by 27.5% as N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O plasma power increases up to 150 W, whereas it is degraded at a N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O plasma power of 200 W. These results are found to describe the relationship between the N content and film properties. The N content in the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films fabricated using increasing N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O plasma power of 100, 150, and 200 W gradually increased by 0.2%, 0.4%, and 0.5%, respectively. However, the N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O plasma power of 200 W results in increased O deficient Si bonding. To investigate the effects of continuous plasma exposure at the bottom layer during the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> deposition, we fabricated indium–zinc oxide (IZO) top-gate bottom-contact (TG-BC) thin-film transistors (TFTs) using the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> as a gate insulator (G.I). Compared to the O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma, the IZO TFTs using N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O plasma reactant during the G.I deposition show stable transfer characteristics. The IZO TFT using N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O plasma with 150-W power during the G.I deposition shows the optimal positive/negative bias temperature stress (P/NBTS) results, with the threshold voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$V_{mathbf {TH}}$ </tex-math></inline-formula> ) variations of 0.0 and −0.3 V, respectively." @default.
- W4285144707 created "2022-07-14" @default.
- W4285144707 creator A5064178883 @default.
- W4285144707 creator A5066744863 @default.
- W4285144707 creator A5071947816 @default.
- W4285144707 creator A5076443181 @default.
- W4285144707 date "2022-06-01" @default.
- W4285144707 modified "2023-10-10" @default.
- W4285144707 title "Impact of N<sub>2</sub>O Plasma Reactant on PEALD-SiO<sub>2</sub> Insulator for Remarkably Reliable ALD-Oxide Semiconductor TFTs" @default.
- W4285144707 cites W1492021603 @default.
- W4285144707 cites W1589686892 @default.
- W4285144707 cites W1966189370 @default.
- W4285144707 cites W1995685395 @default.
- W4285144707 cites W1995777198 @default.
- W4285144707 cites W1996547663 @default.
- W4285144707 cites W1998991681 @default.
- W4285144707 cites W2001610435 @default.
- W4285144707 cites W2010540469 @default.
- W4285144707 cites W2017919086 @default.
- W4285144707 cites W2019007068 @default.
- W4285144707 cites W2023603575 @default.
- W4285144707 cites W2034052725 @default.
- W4285144707 cites W2034186947 @default.
- W4285144707 cites W2038527499 @default.
- W4285144707 cites W2045578753 @default.
- W4285144707 cites W2046211982 @default.
- W4285144707 cites W2061101776 @default.
- W4285144707 cites W2074340492 @default.
- W4285144707 cites W2089108739 @default.
- W4285144707 cites W2129548429 @default.
- W4285144707 cites W2136204347 @default.
- W4285144707 cites W2158932701 @default.
- W4285144707 cites W2180319299 @default.
- W4285144707 cites W2294472831 @default.
- W4285144707 cites W2315349899 @default.
- W4285144707 cites W2336417746 @default.
- W4285144707 cites W2410296872 @default.
- W4285144707 cites W2545354885 @default.
- W4285144707 cites W2621524440 @default.
- W4285144707 cites W2902549249 @default.
- W4285144707 cites W2903193501 @default.
- W4285144707 cites W2910705519 @default.
- W4285144707 cites W3036979667 @default.
- W4285144707 cites W3118967930 @default.
- W4285144707 doi "https://doi.org/10.1109/ted.2022.3169110" @default.
- W4285144707 hasPublicationYear "2022" @default.
- W4285144707 type Work @default.
- W4285144707 citedByCount "5" @default.
- W4285144707 countsByYear W42851447072022 @default.
- W4285144707 countsByYear W42851447072023 @default.
- W4285144707 crossrefType "journal-article" @default.
- W4285144707 hasAuthorship W4285144707A5064178883 @default.
- W4285144707 hasAuthorship W4285144707A5066744863 @default.
- W4285144707 hasAuthorship W4285144707A5071947816 @default.
- W4285144707 hasAuthorship W4285144707A5076443181 @default.
- W4285144707 hasConcept C113196181 @default.
- W4285144707 hasConcept C121332964 @default.
- W4285144707 hasConcept C178790620 @default.
- W4285144707 hasConcept C185544564 @default.
- W4285144707 hasConcept C185592680 @default.
- W4285144707 hasConcept C192562407 @default.
- W4285144707 hasConcept C82706917 @default.
- W4285144707 hasConceptScore W4285144707C113196181 @default.
- W4285144707 hasConceptScore W4285144707C121332964 @default.
- W4285144707 hasConceptScore W4285144707C178790620 @default.
- W4285144707 hasConceptScore W4285144707C185544564 @default.
- W4285144707 hasConceptScore W4285144707C185592680 @default.
- W4285144707 hasConceptScore W4285144707C192562407 @default.
- W4285144707 hasConceptScore W4285144707C82706917 @default.
- W4285144707 hasFunder F4320321681 @default.
- W4285144707 hasIssue "6" @default.
- W4285144707 hasLocation W42851447071 @default.
- W4285144707 hasOpenAccess W4285144707 @default.
- W4285144707 hasPrimaryLocation W42851447071 @default.
- W4285144707 hasRelatedWork W1983192150 @default.
- W4285144707 hasRelatedWork W1992734408 @default.
- W4285144707 hasRelatedWork W2024680443 @default.
- W4285144707 hasRelatedWork W2046459879 @default.
- W4285144707 hasRelatedWork W2065302823 @default.
- W4285144707 hasRelatedWork W2099788178 @default.
- W4285144707 hasRelatedWork W2181638128 @default.
- W4285144707 hasRelatedWork W2606430476 @default.
- W4285144707 hasRelatedWork W2742811867 @default.
- W4285144707 hasRelatedWork W2082188198 @default.
- W4285144707 hasVolume "69" @default.
- W4285144707 isParatext "false" @default.
- W4285144707 isRetracted "false" @default.
- W4285144707 workType "article" @default.