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- W4285149478 abstract "The high defect density on the surface of AlGaN material with high Al composition limits its application in the field of solar-blind ultraviolet (UV) detection. In this work, a surface modification method for AlGaN has been proposed to enhance the performance of AlGaN metal–semiconductor–metal (MSM) solar-blind UV photodetectors (PDs). The 5,10,15,20-T(4-OH P)P (C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>44</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>30</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> ) organic molecules are chemically adsorbed on the surface of high-Al-content Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.6</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.4</sub> N MSM PD, which can reduce the interface potential caused by material defects and increase the photogenerated carriers of the device. Compared with the control unmodified PD, the C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>44</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>30</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> modification method significantly increases the photocurrent and responsivity of the PD, which is beneficial to improve the optoelectronic performances of III-nitride-based PDs." @default.
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- W4285149478 date "2022-08-01" @default.
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- W4285149478 title "Effect of C₄₄H₃₀N₄O₄ Surface Modification on the Performance of Al<sub>0.6</sub>Ga<sub>0.4</sub>N MSM Photodetectors" @default.
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- W4285149478 doi "https://doi.org/10.1109/ted.2022.3182285" @default.
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