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• W4285156883 abstract "We present a comprehensive characterization of amorphous alumina (a-Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) high- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${k}$ </tex-math></inline-formula> dielectric in metal–insulator–metal (MIM) stacks, self-consistently extracting the space-energy distribution of a-Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> atomic defects and the related bond-breaking process parameters. Active defects are profiled via simultaneous simulation of current–voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit {V}$ </tex-math></inline-formula> ), capacitance–voltage ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CV</i> ), conductance–voltage (GV) (i.e., defect spectroscopy), and low-field <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> hysteresis analysis. The defect energies extracted ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${E}_{TH}= 1.55$ </tex-math></inline-formula> and 3.55 eV) are consistent with oxygen vacancies and aluminum interstitials. The voltage-dependent dielectric breakdown (VDDB) statistics of a-Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> is investigated using ramped voltage stress (RVS). The VDDB statistics show a complex and polarity-dependent breakdown statistics, correlating with defect distributions, which allows estimating the a-Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> bond-breaking parameters with the support of multiscale atomistic simulations of the breakdown process." @default.
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• W4285156883 date "2022-07-01" @default.
• W4285156883 modified "2023-09-30" @default.
• W4285156883 title "Atomic Defects Profiling and Reliability of Amorphous Al₂O₃ Metal–Insulator–Metal Stacks" @default.
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• W4285156883 doi "https://doi.org/10.1109/ted.2022.3172928" @default.
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