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• W4285195364 endingPage "4431" @default.
• W4285195364 startingPage "4427" @default.
• W4285195364 abstract "A small subthreshold swing (SS) hydrogen-terminated diamond field-effect transistor is realized by using a wide bandgap material (SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ). Results showed an SS of 106.4 mV/dec, which should be ascribed to the low interface state density (1.05 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$times10$ </tex-math></inline-formula> <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$^{-2}cdot $ </tex-math></inline-formula> eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−1</sup> ) between SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and diamond. The fixed charge density and trapped charge density are <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$1.1times10$ </tex-math></inline-formula> <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$8.6times10$ </tex-math></inline-formula> <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−2</sup> , respectively. Leakage current between source and gate is less than <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$2.1times10$ </tex-math></inline-formula> <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−8</sup> A at gate voltages from −5.0 to 1.0 V and the breakdown voltage is measured to be −180 V. In addition, the devices exhibit normally- OFF characteristics, whose threshold voltage and maximum drain current density are −0.12 V and −21.6 mA/mm with 4- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu text{m}$ </tex-math></inline-formula> gate at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{GS} = -3$ </tex-math></inline-formula> V. The ON/OFF ratio is around 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> and the maximum effective mobility is extracted to be 165 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /(Vs). This work indicates that SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> dielectric could form low interface state density with hydrogen-terminated diamond surface and it also provides a simple method to realize normally- OFF devices." @default.
• W4285195364 created "2022-07-14" @default.
• W4285195364 creator A5001489754 @default.
• W4285195364 creator A5019892531 @default.
• W4285195364 creator A5020746135 @default.
• W4285195364 creator A5020985791 @default.
• W4285195364 creator A5044981209 @default.
• W4285195364 creator A5047109292 @default.
• W4285195364 creator A5070626801 @default.
• W4285195364 creator A5080698486 @default.
• W4285195364 creator A5081860161 @default.
• W4285195364 creator A5088152969 @default.
• W4285195364 date "2022-08-01" @default.
• W4285195364 modified "2023-10-16" @default.
• W4285195364 title "Small Subthreshold Swing Diamond Field Effect Transistors With SnO₂ Gate Dielectric" @default.
• W4285195364 cites W1682254524 @default.
• W4285195364 cites W1971540314 @default.
• W4285195364 cites W1975709025 @default.
• W4285195364 cites W1997639495 @default.
• W4285195364 cites W2040393474 @default.
• W4285195364 cites W2043044116 @default.
• W4285195364 cites W2046264161 @default.
• W4285195364 cites W2052829243 @default.
• W4285195364 cites W2070998851 @default.
• W4285195364 cites W2119004371 @default.
• W4285195364 cites W2151091964 @default.
• W4285195364 cites W2229445888 @default.
• W4285195364 cites W2287251183 @default.
• W4285195364 cites W2517149915 @default.
• W4285195364 cites W2529431180 @default.
• W4285195364 cites W2584189402 @default.
• W4285195364 cites W2607325924 @default.
• W4285195364 cites W2612023476 @default.
• W4285195364 cites W2615453867 @default.
• W4285195364 cites W2623092583 @default.
• W4285195364 cites W2943435805 @default.
• W4285195364 cites W2951778223 @default.
• W4285195364 cites W2971654476 @default.
• W4285195364 cites W3000616676 @default.
• W4285195364 cites W3004624968 @default.
• W4285195364 cites W3042985154 @default.
• W4285195364 cites W3096794611 @default.
• W4285195364 cites W3128330697 @default.
• W4285195364 cites W3133380472 @default.
• W4285195364 cites W3140187087 @default.
• W4285195364 cites W3159290860 @default.
• W4285195364 cites W3170628959 @default.
• W4285195364 cites W4221020439 @default.
• W4285195364 doi "https://doi.org/10.1109/ted.2022.3184280" @default.
• W4285195364 hasPublicationYear "2022" @default.
• W4285195364 type Work @default.
• W4285195364 citedByCount "2" @default.
• W4285195364 countsByYear W42851953642023 @default.
• W4285195364 crossrefType "journal-article" @default.
• W4285195364 hasAuthorship W4285195364A5001489754 @default.
• W4285195364 hasAuthorship W4285195364A5019892531 @default.
• W4285195364 hasAuthorship W4285195364A5020746135 @default.
• W4285195364 hasAuthorship W4285195364A5020985791 @default.
• W4285195364 hasAuthorship W4285195364A5044981209 @default.
• W4285195364 hasAuthorship W4285195364A5047109292 @default.
• W4285195364 hasAuthorship W4285195364A5070626801 @default.
• W4285195364 hasAuthorship W4285195364A5080698486 @default.
• W4285195364 hasAuthorship W4285195364A5081860161 @default.
• W4285195364 hasAuthorship W4285195364A5088152969 @default.
• W4285195364 hasConcept C11413529 @default.
• W4285195364 hasConcept C121332964 @default.
• W4285195364 hasConcept C33923547 @default.
• W4285195364 hasConceptScore W4285195364C11413529 @default.
• W4285195364 hasConceptScore W4285195364C121332964 @default.
• W4285195364 hasConceptScore W4285195364C33923547 @default.
• W4285195364 hasFunder F4320321001 @default.
• W4285195364 hasFunder F4320321543 @default.
• W4285195364 hasFunder F4320335777 @default.
• W4285195364 hasFunder F4320336567 @default.
• W4285195364 hasIssue "8" @default.
• W4285195364 hasLocation W42851953641 @default.
• W4285195364 hasOpenAccess W4285195364 @default.
• W4285195364 hasPrimaryLocation W42851953641 @default.
• W4285195364 hasRelatedWork W2271181815 @default.
• W4285195364 hasRelatedWork W2902782467 @default.
• W4285195364 hasRelatedWork W2935759653 @default.
• W4285195364 hasRelatedWork W3105167352 @default.
• W4285195364 hasRelatedWork W3148032049 @default.
• W4285195364 hasRelatedWork W54078636 @default.
• W4285195364 hasRelatedWork W1501425562 @default.
• W4285195364 hasRelatedWork W2298861036 @default.
• W4285195364 hasRelatedWork W2954470139 @default.
• W4285195364 hasRelatedWork W3084825885 @default.
• W4285195364 hasVolume "69" @default.
• W4285195364 isParatext "false" @default.
• W4285195364 isRetracted "false" @default.
• W4285195364 workType "article" @default.