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• W4285228122 abstract "This letter reports on the high voltage operations and high temperature operations of the transparent polycrystalline diamond field-effect transistor (TPD-FET). The devices were fabricated with a wide range of wide gate-drain lengths ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${L}_{textit {GD}}$ </tex-math></inline-formula> ) and a thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> passivation layer of 400 nm. Voltage breakdowns of more than 1000 V have been observed in high voltage measurements. The temperature dependence and performance of the devices at RT to 673 K were also shown. As the temperature was varied, the maximum drain currents ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}_{{D max}}$ </tex-math></inline-formula> ) for different <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${L}_{textit {GD}}$ </tex-math></inline-formula> devices increased significantly from 33.8 mA/mm – 72.8 mA <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$/$ </tex-math></inline-formula> mm to 86.0 mA/mm - 116.4 mA <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$/$ </tex-math></inline-formula> mm in terms of absolute values. The findings demonstrate the advantages and potential of diamond-based devices in high temperature conditions." @default.
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• W4285228122 date "2022-07-01" @default.
• W4285228122 modified "2023-10-18" @default.
• W4285228122 title "High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET" @default.
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• W4285228122 doi "https://doi.org/10.1109/led.2022.3175473" @default.
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