FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4285252245> ?p ?o ?g. }

• W4285252245 endingPage "3721" @default.
• W4285252245 startingPage "3716" @default.
• W4285252245 abstract "Ultrathin indium oxide (InO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><i>x</i></sub> ) films (≤5 nm), which are grown by plasma-enhanced (PE) atomic layer deposition (ALD) with (C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> ) <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> InCH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> and O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma, are explored as channels of thin-film transistors (TFTs). First, we investigate the effects of channel thickness ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${T}_{text{ch}}$ </tex-math></inline-formula> ), channel length ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${L}_{text{ch}}$ </tex-math></inline-formula> ), and post-annealing conditions on the performance of TFTs with HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate dielectrics, respectively. The results indicate that superior overall performance can be achieved for the device with 2.5 nm <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${T}_{text{ch}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$2 ~mu text{m} {L}_{text{ch}}$ </tex-math></inline-formula> , and 8.5 nm HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate dielectric after annealing at 325 °C for 180 s in O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . Increasing the post-annealing temperature to 350 °C degrades the TFTs because of crystallization of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and outdiffusion of In element. Furthermore, with a PE chemical vapor-deposited SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> passivation layer on the back of the channel, the performance of the TFTs is significantly improved after post-annealing, especially at 300 °C for 1 h in air, such as near-zero-threshold voltage, a very small subthreshold slope (SS) of 69 mV/dec, a very high On/Off current ratio of ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>10</sup> , and relatively high field effect mobility of 17 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> / <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{V}cdot text{s}$ </tex-math></inline-formula> . Finally, the positive and negative gate bias stress (NGBS) measurements of the devices also indicate that the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> passivation layer can improve remarkably the NGBS stability. Thus, such a kind of device could be very promising for low-voltage and low-power applications." @default.
• W4285252245 created "2022-07-14" @default.
• W4285252245 creator A5012483210 @default.
• W4285252245 creator A5036562653 @default.
• W4285252245 creator A5047221528 @default.
• W4285252245 creator A5053732228 @default.
• W4285252245 creator A5056147381 @default.
• W4285252245 creator A5089961428 @default.
• W4285252245 date "2022-07-01" @default.
• W4285252245 modified "2023-10-14" @default.
• W4285252245 title "High Performance (V_th ~ 0 V, SS ~ 69 mV/dec, I_On/I_Off ~ 10¹⁰) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO₂ Passivation" @default.
• W4285252245 cites W1990798163 @default.
• W4285252245 cites W2003465565 @default.
• W4285252245 cites W2008890811 @default.
• W4285252245 cites W2019936400 @default.
• W4285252245 cites W2029644066 @default.
• W4285252245 cites W2051321821 @default.
• W4285252245 cites W2070308634 @default.
• W4285252245 cites W2077400700 @default.
• W4285252245 cites W2124132059 @default.
• W4285252245 cites W2281514995 @default.
• W4285252245 cites W2312445932 @default.
• W4285252245 cites W2323561876 @default.
• W4285252245 cites W2333678145 @default.
• W4285252245 cites W2417111576 @default.
• W4285252245 cites W2466221081 @default.
• W4285252245 cites W2492585270 @default.
• W4285252245 cites W2545354885 @default.
• W4285252245 cites W2568863549 @default.
• W4285252245 cites W2745668305 @default.
• W4285252245 cites W2746275752 @default.
• W4285252245 cites W2784019474 @default.
• W4285252245 cites W2891438692 @default.
• W4285252245 cites W2891809216 @default.
• W4285252245 cites W2968389934 @default.
• W4285252245 cites W2985830373 @default.
• W4285252245 cites W3048596759 @default.
• W4285252245 cites W3117971052 @default.
• W4285252245 cites W3124021256 @default.
• W4285252245 cites W3128169148 @default.
• W4285252245 cites W3138976564 @default.
• W4285252245 cites W3139097846 @default.
• W4285252245 cites W3197625865 @default.
• W4285252245 doi "https://doi.org/10.1109/ted.2022.3173249" @default.
• W4285252245 hasPublicationYear "2022" @default.
• W4285252245 type Work @default.
• W4285252245 citedByCount "4" @default.
• W4285252245 countsByYear W42852522452022 @default.
• W4285252245 countsByYear W42852522452023 @default.
• W4285252245 crossrefType "journal-article" @default.
• W4285252245 hasAuthorship W4285252245A5012483210 @default.
• W4285252245 hasAuthorship W4285252245A5036562653 @default.
• W4285252245 hasAuthorship W4285252245A5047221528 @default.
• W4285252245 hasAuthorship W4285252245A5053732228 @default.
• W4285252245 hasAuthorship W4285252245A5056147381 @default.
• W4285252245 hasAuthorship W4285252245A5089961428 @default.
• W4285252245 hasConcept C121332964 @default.
• W4285252245 hasConceptScore W4285252245C121332964 @default.
• W4285252245 hasFunder F4320321001 @default.
• W4285252245 hasFunder F4320335777 @default.
• W4285252245 hasIssue "7" @default.
• W4285252245 hasLocation W42852522451 @default.
• W4285252245 hasOpenAccess W4285252245 @default.
• W4285252245 hasPrimaryLocation W42852522451 @default.
• W4285252245 hasRelatedWork W1536502753 @default.
• W4285252245 hasRelatedWork W2902782467 @default.
• W4285252245 hasRelatedWork W2935759653 @default.
• W4285252245 hasRelatedWork W3105167352 @default.
• W4285252245 hasRelatedWork W3148032049 @default.
• W4285252245 hasRelatedWork W54078636 @default.
• W4285252245 hasRelatedWork W1501425562 @default.
• W4285252245 hasRelatedWork W2298861036 @default.
• W4285252245 hasRelatedWork W2954470139 @default.
• W4285252245 hasRelatedWork W3084825885 @default.
• W4285252245 hasVolume "69" @default.
• W4285252245 isParatext "false" @default.
• W4285252245 isRetracted "false" @default.
• W4285252245 workType "article" @default.