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• W4285259462 abstract "Spintronic-based integrated circuits have been extensively explored as viable contenders for space use since magnetic tunnel junctions (MTJs) are intrinsically immune to radiation effects. On the other hand, their complementary metal oxide semiconductor (CMOS) peripheral circuitry is still susceptible to radiation-induced single-event upset (SEU) and multi-node upset (MNU) caused by charge sharing. It results in localized ionization and flips the data state of memory cell or other logic circuits. To ensure a fault free operation, this paper proposes a novel radiation-hardened CMOS peripheral circuitry for magnetic full adder (MFA) using spin orbit torque (SOT) MTJ. The proposed circuit can recover from SEUs as well as MNUs regardless of the accumulated charge. Moreover, the read time and read energy of the proposed circuit is improved by 17.6% and 64% respectively, when compared to the previously reported radiation hardened magnetic full adder (RH-MFA)." @default.
• W4285259462 created "2022-07-14" @default.
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• W4285259462 date "2022-01-01" @default.
• W4285259462 modified "2023-10-02" @default.
• W4285259462 title "Novel Radiation Hardened Magnetic Full Adder Using Spin-Orbit Torque for Multi-Node Upset" @default.
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• W4285259462 doi "https://doi.org/10.1109/lmag.2022.3178627" @default.
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