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• W4285301828 abstract "Traveling-wave electro-optic (E-O) modulators based on thin-film lithium niobate (TFLN) have attracted much attention recently, as low half-wave voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{V}_{pi }$ </tex-math></inline-formula> ) and wide modulation bandwidth can be realized with a small footprint. A flat E-O response of the modulator relies on low microwave loss, perfect velocity match and suitable terminal resistance. In this Letter, we present velocity-matched TFLN modulator based on low-loss capacitively-loaded traveling-wave electrodes (CL-TWEs) with an on-chip terminal resistor. The effect of termination resistance on the E-O frequency response is theoretically analyzed and experimentally confirmed. The TFLN modulator with 6-mm modulation length exhibit a <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{V}_{pi }$ </tex-math></inline-formula> of 2.7 V and a 6.4-dB electrical bandwidth over 160 GHz. By adopting a termination resistance slightly lower than the characteristic impedance of the CL-TWEs, an ultra-flat E-O response has been demonstrated with fluctuation less than 1-dB up to 50 GHz, consistent with the theoretical prediction." @default.
• W4285301828 created "2022-07-14" @default.
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• W4285301828 date "2022-08-15" @default.
• W4285301828 modified "2023-10-17" @default.
• W4285301828 title "Capacitively-Loaded Thin-Film Lithium Niobate Modulator With Ultra-Flat Frequency Response" @default.
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• W4285301828 doi "https://doi.org/10.1109/lpt.2022.3178214" @default.
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