Matches in SemOpenAlex for { <https://semopenalex.org/work/W4285306539> ?p ?o ?g. }
Showing items 1 to 77 of
77
with 100 items per page.
- W4285306539 endingPage "43" @default.
- W4285306539 startingPage "35" @default.
- W4285306539 abstract "Compute-in-memory (CIM) is a promising approach for efficiently performing data-centric computing (such as neural network computations). Among the multiple semiconductor memory technologies, embedded DRAM (eDRAM), which integrates the DRAM bit cell with high-performance logic transistors, can enable efficient CIM designs. However, the silicon-based eDRAM technology suffers from poor retention time-incurring significant refresh power overhead. However, eDRAM using back-end-of-line (BEOL) integrated <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$C$ </tex-math></inline-formula> -axis aligned crystalline (CAAC) indium–gallium–zinc–oxide (IGZO) transistors, exhibiting extreme low leakage, is a promising memory technology with lower refresh power overhead. A long retention time in IGZO eDRAM can enable multilevel cell functionality, which can improve its efficacy in CIM applications. In this article, we explore a capacitorless IGZO eDRAM-based multilevel cell, capable of storing 1.5 bits/cell for CIM designs focused on deep neural network (DNN) inference applications. We perform a detailed design space exploration of IGZO eDRAM sensitivity to process temperature variations for read, write, and retention operations followed by architecture-level simulations comparing performance and energy for different workloads. The effectiveness of IGZO eDRAM-based CIM architecture is evaluated using a representative neural network, and the proposed approach achieves 82% Top-1 inference accuracy for the CIFAR-10 dataset, compared with 87% software accuracy with high bit cell storage density." @default.
- W4285306539 created "2022-07-14" @default.
- W4285306539 creator A5003048953 @default.
- W4285306539 creator A5031054921 @default.
- W4285306539 creator A5088326114 @default.
- W4285306539 date "2022-06-01" @default.
- W4285306539 modified "2023-09-25" @default.
- W4285306539 title "IGZO CIM: Enabling In-Memory Computations Using Multilevel Capacitorless Indium–Gallium–Zinc–Oxide-Based Embedded DRAM Technology" @default.
- W4285306539 cites W2034861439 @default.
- W4285306539 cites W2035713928 @default.
- W4285306539 cites W2090032487 @default.
- W4285306539 cites W2102449048 @default.
- W4285306539 cites W2104561507 @default.
- W4285306539 cites W2126100502 @default.
- W4285306539 cites W2922487710 @default.
- W4285306539 cites W3138864966 @default.
- W4285306539 cites W3150999880 @default.
- W4285306539 cites W3159274266 @default.
- W4285306539 cites W3162617397 @default.
- W4285306539 cites W4221021935 @default.
- W4285306539 cites W4285121610 @default.
- W4285306539 doi "https://doi.org/10.1109/jxcdc.2022.3188366" @default.
- W4285306539 hasPublicationYear "2022" @default.
- W4285306539 type Work @default.
- W4285306539 citedByCount "1" @default.
- W4285306539 countsByYear W42853065392023 @default.
- W4285306539 crossrefType "journal-article" @default.
- W4285306539 hasAuthorship W4285306539A5003048953 @default.
- W4285306539 hasAuthorship W4285306539A5031054921 @default.
- W4285306539 hasAuthorship W4285306539A5088326114 @default.
- W4285306539 hasBestOaLocation W42853065391 @default.
- W4285306539 hasConcept C118524514 @default.
- W4285306539 hasConcept C118702147 @default.
- W4285306539 hasConcept C127413603 @default.
- W4285306539 hasConcept C149635348 @default.
- W4285306539 hasConcept C24326235 @default.
- W4285306539 hasConcept C2780866740 @default.
- W4285306539 hasConcept C41008148 @default.
- W4285306539 hasConcept C7366592 @default.
- W4285306539 hasConcept C87907426 @default.
- W4285306539 hasConcept C92855701 @default.
- W4285306539 hasConcept C9390403 @default.
- W4285306539 hasConcept C98986596 @default.
- W4285306539 hasConceptScore W4285306539C118524514 @default.
- W4285306539 hasConceptScore W4285306539C118702147 @default.
- W4285306539 hasConceptScore W4285306539C127413603 @default.
- W4285306539 hasConceptScore W4285306539C149635348 @default.
- W4285306539 hasConceptScore W4285306539C24326235 @default.
- W4285306539 hasConceptScore W4285306539C2780866740 @default.
- W4285306539 hasConceptScore W4285306539C41008148 @default.
- W4285306539 hasConceptScore W4285306539C7366592 @default.
- W4285306539 hasConceptScore W4285306539C87907426 @default.
- W4285306539 hasConceptScore W4285306539C92855701 @default.
- W4285306539 hasConceptScore W4285306539C9390403 @default.
- W4285306539 hasConceptScore W4285306539C98986596 @default.
- W4285306539 hasFunder F4320310620 @default.
- W4285306539 hasIssue "1" @default.
- W4285306539 hasLocation W42853065391 @default.
- W4285306539 hasLocation W42853065392 @default.
- W4285306539 hasOpenAccess W4285306539 @default.
- W4285306539 hasPrimaryLocation W42853065391 @default.
- W4285306539 hasRelatedWork W1966671390 @default.
- W4285306539 hasRelatedWork W2068579290 @default.
- W4285306539 hasRelatedWork W2122895920 @default.
- W4285306539 hasRelatedWork W2197625358 @default.
- W4285306539 hasRelatedWork W2392572846 @default.
- W4285306539 hasRelatedWork W2572980350 @default.
- W4285306539 hasRelatedWork W2774845646 @default.
- W4285306539 hasRelatedWork W3185952280 @default.
- W4285306539 hasRelatedWork W956872486 @default.
- W4285306539 hasRelatedWork W2162910241 @default.
- W4285306539 hasVolume "8" @default.
- W4285306539 isParatext "false" @default.
- W4285306539 isRetracted "false" @default.
- W4285306539 workType "article" @default.