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• W4285397878 abstract "Si capping layer is the most notable approach used in Ge metal-oxide-semiconductor (MOS); 1-2 however, the Ge segregation and diffusion occurred during the growth of Si. 3-4 The formation of undesirable GeO x is detrimental to the Ge nMOS reliability. 5 This work focuses on using the scavenging process to reduce the segregated Ge atoms and to completely remove GeO x in the high-k/ epi -Si/ epi -Ge(001). We used high-resolution synchrotron radiation photoelectron spectroscopy (SRPES) to show the detailed development of Ge segregation and scavenging Ge using in-situ film growth, oxidation, and annealing. The Si films in 8Å thickness were grown on the epi -Ge(001) in a semiconductor molecular beam epitaxy (MBE) chamber. 2 These samples were in-situ transferred to National Synchrotron Radiation Research Center in Taiwan for electronic structure studies using photoemission. Molecular oxygen was exposed to the epi -Si/ epi -Ge(001) surfaces at 300°C in the photoemission chamber. The samples were then in-situ annealed at 500°C for 5 min under an ultra-high vacuum (UHV). The topmost surface of epi -Ge(001) is terminated with Ge-Ge buckled dimers. 6 In the case of room-temperature grown amorphous Si (a-Si) film, the intensity of the Ge down-dimer component from the underlying epi -Ge remains as it is. The Ge up-dimer atoms were partly diffused into the a-Si film, and some of them were segregated to the top of the a-Si surface. The epi -Si grown at 260 - 280°C causes the rest of the Ge down-dimer atoms to move to the epi -Si surface to become both segregated Ge (segGe) and diffused Ge (diff-Ge). The growth of Si merely affects the topmost surface, and the Ge atoms in the second layer of the epi -Ge remain intact. A comparison of the amount of GeO x for HfO 2 / epi -Si/ epi -Ge(001) and HfO 2 / epi -Ge(001) shows that the epi -Si has greatly reduced the amount of GeO x . However, the GeO x , segGe and diff-Ge components are still observed in the HfO 2 / epi -Si/Ge(001) samples. We have previously reported that three-time scavenging cycles have greatly reduced the amount of segGe and diff-Ge atoms in high-κ/ epi -Si/n-Ge(001), thus decreasing electron traps. 7 Each scavenging cycle includes room-temperature oxidation followed by thermal annealing. In this study, the oxidation of the as-grown epi -Si/ epi -Ge(001) samples was performed at 300°C. It is worth noting that there is no GeO x formation on the surface after the thermal oxidation, which is different from the room-temperature oxidation of the epi -Si/ epi -Ge(001) surfaces. In addition, the oxidation at 300°C affects part of the diff-Ge atoms to evaporate from the surface, which is also different from our previous work, where the diff-Ge component shows no change in intensity since the oxidation occurred at room temperature. The subsequent in-situ annealing at 500°C moved the residual Ge-boned Si (diff-Ge) inside the epi -Si to the surface to become part of the segGe atoms. In conclusion, we have used the aforementioned process to further reduce the segregated Ge, and thus the GeO x , on top of the epi -Si/ epi -Ge(001). To whom the correspondence is addressed: mhong@phys.ntu.edu.tw (M. Hong), raynien@phys.nthu.edu.tw (J. Kwo), and pi@nsrrc.org.tw (T. W. Pi) Acknowledgments This work is supported by MOST 110-2112-M-002-036-, 110-2622-8-002-014-, 110-2923-M-002-001-, and 110-2112-M-213-012- of the Ministry of Science and Technology in Taiwan. Reference 1 H. Arimura, E. Capogreco, A. Vohra, C. Porret, R. Loo, E. Rosseel, A. Hikavyy, D. Cott, G. Boccardi, L. Witters, G. Eneman, J. Mitard, N. Collaert, and N. Horiguchi, IEEE Int. Electron Devices Meet., 2.1.1−2.1.4 (2020). 2 H. W. Wan, Y. J. Hong, Y. T. Cheng, C. K. Cheng, C. H. Hsu, C. T. Wu, T. W. Pi, J. Kwo, and M. Hong, M., ACS Appl. Electron. Mater. 3 , 2164−2169 (2021). 3 R. Loo, H. Arimura, D. Cott, L. Witters, G. Pourtois, A. Schulze, B. Douhard, W. Vanherle, G. Eneman, O. Richard, P. Favia, J. Mitard, D. Mocuta, R. Langer, N. Collaert, ECS J. Solid State Sci. Technol. 7 , 66−72 (2018). 4 Y. T. Cheng, H. W. Wan, C. K. Cheng, C. P. Cheng, J. Kwo, M. Hong, T. W. Pi, Appl. Phys. Express 13 , 085504 (2020). 5 J. Franco, B. Kaczer, P. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken, IEEE Int. Electron Devices Meet., 15.2.1−15.2.4 (2013). 6 Y. T. Cheng, Y. H. Lin, W. S. Chen, K. Y. Lin, H. W. Wan, C. P. Cheng, H. H. Cheng, J. Kwo, M. Hong, T. W. Pi, Appl. Phys. Express 10 , 075701 (2017). 7 Y. T. Cheng, H. W. Wan, T. Y. Chu, T. W. Pi, J. Kwo, M. Hong, ACS Appl. Electron. Mater. 3 , 4484-4489 (2021)." @default.
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• W4285397878 title "Microscopic Views of Ge Segregation and Scavenging Ge on Thin Si on Epi-Ge(001)" @default.
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