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• W4285412368 abstract "Addressable gated field emitter arrays (FEAs) have important applications in vacuum microelectronic devices. To fabricate high-performance device, a comprehensive understanding on the field emission characteristics of gated FEAs is necessary, which requires a quantitative analysis method. In this work, a general model based on Fowler-Nordheim (FN) theory has been established to fulfill this blank. It is found that nonlinear FN plot with positive and negative slopes could occur in gated FEAs, which its turning point is related to the proportion of anode and gate field. This provides a way for obtaining the field strengths applied by the anode and gate structures. Besides, the transconductance of the gated FEAs increases exponentially with the total surface field, which indicates that both the anode and gate field need to be increased for achieving a high transconductance device. As a demonstration, the addressable gated ZnO nanowire FEAs using multimicrosize pattern with radius as small as <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$2.5 ~mu text{m}$ </tex-math></inline-formula> have been designed and fabricated. The relationship between the transconductance and anode voltage can be well fitted by using the model, which deduces the proportion of anode and gate field in the device to be about 3:1." @default.
• W4285412368 created "2022-07-14" @default.
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• W4285412368 date "2022-09-01" @default.
• W4285412368 modified "2023-09-26" @default.
• W4285412368 title "Quantitative Analysis on the Field Strength in the Addressable Gated ZnO Nanowire Field Emitter Arrays: Model and Experiment" @default.
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• W4285412368 doi "https://doi.org/10.1109/ted.2022.3188947" @default.
• W4285412368 hasPublicationYear "2022" @default.
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