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• W4285412644 abstract "In this work, the impact of low-pressure chemical vapor deposition (LPCVD)-Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> stoichiometry on 2-D electron gas (2-DEG) transport characteristics of the AlGaN (3.9 nm)/GaN heterostructure and the underlying mechanism of increased 2-DEG density are studied, which reveals a new perspective of improving AlGaN/GaN performance by dielectric engineering. Among the AlGaN/GaN passivated by the LPCVD-Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> with tailored stoichiometry, the 2-DEG density and mobility in the Si-rich sample were significantly improved by 25% and 16.3% compared with the N-rich sample, respectively. Accordingly, 30% reduction in sheet resistance of AlGaN/GaN heterostructure is obtained. The potentially strained-induced enhancement of piezoelectric polarization and corresponding 2-DEG variation by the Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> passivation layer was excluded by the negligible change in Raman spectra among the different samples. Alternatively, the X-ray photoelectron spectroscopy (XPS) showed that the varied stoichiometry of the Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> enables a discernible modulation effect of heterostructure energy-band. The reduced surface potential in the sample passivated by Si-rich Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> attributes to the pronounced Ga dangling bonds (DBs) at the LPCVD-Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> /AlGaN interfaces, which provides the near-conduction band (NCB) states and leads to enhanced 2-DEG accumulation." @default.
• W4285412644 created "2022-07-14" @default.
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• W4285412644 date "2022-09-01" @default.
• W4285412644 modified "2023-09-26" @default.
• W4285412644 title "The Modulation Effect of LPCVD-Si_<i>x</i>N_<i>y</i> Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure" @default.
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• W4285412644 doi "https://doi.org/10.1109/ted.2022.3188609" @default.
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