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- W4285591818 abstract "Abstract Memristors are intensively studied as being regarded as the critical components to realize the in‐memory computing paradigm. A novel electrochemical metallization memristor based on solution‐processed Pt/CuI/Cu structure is proposed and demonstrated in this work, with a high resistance switching ratio of 1.53 × 10 7 . Owing to the efficient drift paths provided by Cu vacancies for Cu cations in CuI, very small operating voltages ( V set = 0.64 V and V reset = −0.19 V) are characterized, contributing to ultralow standby power consumption of 9 fW and per set transition of 8.73 µW. Using CuI memristor arrays, a set of Boolean logic operations and a half‐adder are implemented. Moreover, by building the model for a 75 × 48 one‐transistor‐one‐memristor array, the feasibility of hardware encryption and decryption for images is verified. All these demonstrate that solution‐processed CuI memristors possess great potential in constructing energy‐efficient logic‐in‐memory computing architectures." @default.
- W4285591818 created "2022-07-16" @default.
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- W4285591818 date "2022-07-15" @default.
- W4285591818 modified "2023-10-16" @default.
- W4285591818 title "Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor" @default.
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- W4285591818 doi "https://doi.org/10.1002/aelm.202200089" @default.
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