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- W4285815673 abstract "The purpose of the paper is to study, analyze, and understand the different properties of a MESFET. The paper discusses how the variations in different properties and parameters affect the operation of a MESFET. The properties that are considered are the I-V characteristics, the electric field, and the doping properties of a MESFET. In I-V characteristics, change in channel length by 0.3 μm to 0.9 μm, drain current increase by 140%. The gate material used is the Ti-Pt-Au interface because it provides a high barrier that reduces the leakage current. The channel material used is Si due to its good I-V characteristics and cost-effectiveness. And also if using channel material GaAs instead of Ge, saturation occurs at 2.1 V, and for Ge, it is at 2.6 V. n-type MESFET provides five times higher current than p-type MESFET." @default.
- W4285815673 created "2022-07-19" @default.
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- W4285815673 date "2022-04-28" @default.
- W4285815673 modified "2023-10-16" @default.
- W4285815673 title "Analysing the Effects of Varying Parameters in a MESFET" @default.
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- W4285815673 doi "https://doi.org/10.1109/5nano53044.2022.9828947" @default.
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