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• W4286209059 abstract "Abstract 2D semiconductors are regarded as promising candidates for channel applications in the next generation of field effect transistors (FETs) with sub‐5 nm pitch designs. Among 2D transition metal dichalcogenides (TMDs), rhenium disulfide (ReS 2 ) is reported to have weak interaction among neighboring layers, resulting in more susceptibility to the functionalization of the surface channel. The bias temperature instability (BTI) of ReS 2 FETs with α‐molybdenum trioxide (α‐MoO 3 ) passivation that functions as a charge buffer layer is investigated. The transconductance (g m ) with a passivation layer shows the saturation behavior under the critical gate voltage even with cumulative electric stress. In addition, unintentional shifts of threshold voltages (V TH ) are significantly reduced, which is attributed to the effects of the α‐MoO 3 passivation. The electron transfer with the passivation effect suggests a way of surface engineering for controlling the 2D devices with enhanced stabilities." @default.
• W4286209059 created "2022-07-21" @default.
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• W4286209059 date "2022-07-20" @default.
• W4286209059 modified "2023-10-06" @default.
• W4286209059 title "Bias Temperature Instability of Multilayer ReS₂ FET with α‐MoO₃ Passivation" @default.
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• W4286209059 doi "https://doi.org/10.1002/admi.202200378" @default.
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