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- W4286375648 endingPage "4899" @default.
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- W4286375648 abstract "A first principle analysis of Fe/MgO/Fe magnetic tunnel junction (MTJ) having gate voltage over insulated barrier region (MgO) is presented. Because of different work functions of gate and barrier materials, transfer of density of states (DOS) in forbidden energy gap of MgO is found above Fermi energy due to Schottky effect. It is reported that diffused DOS allows high tunneling of majority channel current because of less interference of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${Delta _{{1}}}$ </tex-math></inline-formula> symmetry of Bloch states with evanescent states in barrier. It shows high spin injection efficiency 0.9928, 0.9959, and 0.9871 with tunnel magneto resistance (TMR) ratios 1743.30%, 1450.06%, and 572.62% at gate voltages 1–3 V, respectively, with left and right electrodes at 0.5 V. Present work gives a basis for using MTJs as three terminal devices in magnetic random access memory (MRAM) applications." @default.
- W4286375648 created "2022-07-21" @default.
- W4286375648 creator A5028498726 @default.
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- W4286375648 date "2022-09-01" @default.
- W4286375648 modified "2023-10-02" @default.
- W4286375648 title "First Principle Study of Spin Tunneling Current Under Field Effect in Magnetic Tunnel Junction for Possible Application in STT-RAM" @default.
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- W4286375648 doi "https://doi.org/10.1109/ted.2022.3190251" @default.
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