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- W4286610931 abstract "This chapter briefly describes the development history of MRAM, explains the flip mechanism and flip conditions of STT-MRAM from the perspective of the LLG equation, and further extends to the electrical and magnetic properties of MRAM. Then the manufacturing process related to MRAM is described, including but not limited to photolithography, etching, dielectric isolation, contact, passivation and testing technologies. Finally, the development status of STT-MRAM is given as a guideline for IC designers working on MRAM." @default.
- W4286610931 created "2022-07-22" @default.
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- W4286610931 date "2022-07-11" @default.
- W4286610931 modified "2023-10-16" @default.
- W4286610931 title "Spin‐Transfer Torque Materials and Devices for Magnetic Random‐Access Memory (STT‐MRAM)" @default.
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- W4286610931 doi "https://doi.org/10.1002/9781119698968.ch4" @default.
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