Matches in SemOpenAlex for { <https://semopenalex.org/work/W4288032943> ?p ?o ?g. }
- W4288032943 endingPage "4199" @default.
- W4288032943 startingPage "4194" @default.
- W4288032943 abstract "Successful operation of 4H-silicon carbide (SiC) MOSFET and integrated electronic circuit based on 4H-SiC MOSFET is reported at temperature up to <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$500~^{circ }text{C}$ </tex-math></inline-formula> in air. The high-temperature operation of the integrated circuit (IC) based on 4H-SiC MOSFET strongly depends on the reliability of metal/SiC contact. Based on the transfer length method (TLM), the Ni/Nb/n-type 4H-SiC junction exhibits ohmic behavior with specific contact resistance of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$1.86times 10^{-{4}},, Omega cdot $ </tex-math></inline-formula> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> when operating at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$500~^{circ }text{C}$ </tex-math></inline-formula> . In contrast, the voltage gain of the amplifier is strongly governed by the variation of carrier mobility of the 4H-SiC MOSFET when temperature varies from room temperature to <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$500~^{circ }text{C}$ </tex-math></inline-formula> . The experimental results show that, when the temperature is increased from <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$20~^{circ }text{C}$ </tex-math></inline-formula> to <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$300~^{circ }text{C}$ </tex-math></inline-formula> , the amplifier gain of the IC increased from 23.8 to 153.0. Though the voltage gain decreases when the temperature increases above <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$300~^{circ }text{C}$ </tex-math></inline-formula> , it is still higher than 50 at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$500~^{circ }text{C}$ </tex-math></inline-formula> . These results indicate that integrated electronic circuits based on this 4H-SiC MOSFET technology could be potentially used for harsh environment applications." @default.
- W4288032943 created "2022-07-27" @default.
- W4288032943 creator A5007607230 @default.
- W4288032943 creator A5019050734 @default.
- W4288032943 creator A5040103126 @default.
- W4288032943 creator A5051255682 @default.
- W4288032943 creator A5078644959 @default.
- W4288032943 creator A5082648609 @default.
- W4288032943 date "2022-08-01" @default.
- W4288032943 modified "2023-10-16" @default.
- W4288032943 title "Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications" @default.
- W4288032943 cites W1480975738 @default.
- W4288032943 cites W2001974477 @default.
- W4288032943 cites W2013963303 @default.
- W4288032943 cites W2047649702 @default.
- W4288032943 cites W2053200807 @default.
- W4288032943 cites W2059284919 @default.
- W4288032943 cites W2075066821 @default.
- W4288032943 cites W2092874501 @default.
- W4288032943 cites W2103993860 @default.
- W4288032943 cites W2114902077 @default.
- W4288032943 cites W2126180885 @default.
- W4288032943 cites W2131779120 @default.
- W4288032943 cites W2145757162 @default.
- W4288032943 cites W2151194020 @default.
- W4288032943 cites W2152677897 @default.
- W4288032943 cites W2160076926 @default.
- W4288032943 cites W2170742192 @default.
- W4288032943 cites W2286676582 @default.
- W4288032943 cites W2327579965 @default.
- W4288032943 cites W2613350384 @default.
- W4288032943 cites W2617044157 @default.
- W4288032943 cites W2626847877 @default.
- W4288032943 cites W2650507256 @default.
- W4288032943 cites W2654369641 @default.
- W4288032943 cites W2742610944 @default.
- W4288032943 cites W2771705811 @default.
- W4288032943 cites W2776245937 @default.
- W4288032943 cites W2792592861 @default.
- W4288032943 cites W2808472203 @default.
- W4288032943 cites W2895491178 @default.
- W4288032943 cites W2900182819 @default.
- W4288032943 cites W2905489074 @default.
- W4288032943 cites W2949728079 @default.
- W4288032943 cites W2964537690 @default.
- W4288032943 cites W2971852868 @default.
- W4288032943 cites W2978116591 @default.
- W4288032943 cites W3010366511 @default.
- W4288032943 cites W3013165065 @default.
- W4288032943 cites W3016157333 @default.
- W4288032943 cites W3103591937 @default.
- W4288032943 cites W3111585456 @default.
- W4288032943 cites W3131637326 @default.
- W4288032943 cites W3172476604 @default.
- W4288032943 cites W1995974073 @default.
- W4288032943 doi "https://doi.org/10.1109/ted.2022.3184663" @default.
- W4288032943 hasPublicationYear "2022" @default.
- W4288032943 type Work @default.
- W4288032943 citedByCount "1" @default.
- W4288032943 countsByYear W42880329432023 @default.
- W4288032943 crossrefType "journal-article" @default.
- W4288032943 hasAuthorship W4288032943A5007607230 @default.
- W4288032943 hasAuthorship W4288032943A5019050734 @default.
- W4288032943 hasAuthorship W4288032943A5040103126 @default.
- W4288032943 hasAuthorship W4288032943A5051255682 @default.
- W4288032943 hasAuthorship W4288032943A5078644959 @default.
- W4288032943 hasAuthorship W4288032943A5082648609 @default.
- W4288032943 hasConcept C119599485 @default.
- W4288032943 hasConcept C121332964 @default.
- W4288032943 hasConcept C127413603 @default.
- W4288032943 hasConcept C165801399 @default.
- W4288032943 hasConcept C172385210 @default.
- W4288032943 hasConcept C184720557 @default.
- W4288032943 hasConcept C191897082 @default.
- W4288032943 hasConcept C192562407 @default.
- W4288032943 hasConcept C194257627 @default.
- W4288032943 hasConcept C2778413303 @default.
- W4288032943 hasConcept C2780722187 @default.
- W4288032943 hasConcept C46362747 @default.
- W4288032943 hasConcept C49040817 @default.
- W4288032943 hasConcept C62520636 @default.
- W4288032943 hasConceptScore W4288032943C119599485 @default.
- W4288032943 hasConceptScore W4288032943C121332964 @default.
- W4288032943 hasConceptScore W4288032943C127413603 @default.
- W4288032943 hasConceptScore W4288032943C165801399 @default.
- W4288032943 hasConceptScore W4288032943C172385210 @default.
- W4288032943 hasConceptScore W4288032943C184720557 @default.
- W4288032943 hasConceptScore W4288032943C191897082 @default.
- W4288032943 hasConceptScore W4288032943C192562407 @default.
- W4288032943 hasConceptScore W4288032943C194257627 @default.
- W4288032943 hasConceptScore W4288032943C2778413303 @default.
- W4288032943 hasConceptScore W4288032943C2780722187 @default.
- W4288032943 hasConceptScore W4288032943C46362747 @default.
- W4288032943 hasConceptScore W4288032943C49040817 @default.
- W4288032943 hasConceptScore W4288032943C62520636 @default.
- W4288032943 hasFunder F4320334764 @default.
- W4288032943 hasIssue "8" @default.
- W4288032943 hasLocation W42880329431 @default.