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- W4288045442 abstract "Nowadays, development of transition metal dichalcogenides (TMDs) integrated ultra-fast optoelectronics devices under broad spectral range has attracted our research community. The fabricated devices should have high photoresponsivity, specific detectivity, fast switching, and low power consumption. Herein, we put the efforts to successfully synthesize a large area of WS2 nanostructures using sputtering and chemical vapour deposition (CVD) techniques for ultraviolet-visible (UV-Vis) photodetector applications. It is found that following the sulfurization of sputter deposited tungsten films at 800 °C for 60 min facilitated nanostructures with high surface-area to volume ratio. Promising metal-semiconductor-metal (MSM) featured photodetector test-devices based upon interdigitated symmetric Ag electrodes are fabricated. Finally, interdigitated electrode structure, ohmic contact between metal and photoactive material, and enhanced structural properties allowed the test-device accelerates the photodetector performances with 100 ms of response time under UV and visible illuminations even at a bias voltage of 2 V." @default.
- W4288045442 created "2022-07-27" @default.
- W4288045442 creator A5025828271 @default.
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- W4288045442 date "2022-10-01" @default.
- W4288045442 modified "2023-10-02" @default.
- W4288045442 title "Controlled two-step synthesis of nanostructured WS2 thin films for enhanced UV–visible photodetector applications" @default.
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- W4288045442 doi "https://doi.org/10.1016/j.sna.2022.113780" @default.
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