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- W4288050298 abstract "We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics." @default.
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- W4288050298 date "2022-07-28" @default.
- W4288050298 modified "2023-09-27" @default.
- W4288050298 title "Inscription of lateral superlattices in semiconductors using structured light" @default.
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- W4288050298 doi "https://doi.org/10.1063/5.0102432" @default.
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