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- W4288058194 abstract "Abstract n-type Mg 3 Bi 2 -based materials have been considered to be a promising near-room-temperature thermoelectric material and have recently received a great deal of attention. In this paper, we first investigated the thermoelectric properties of Se doped Mg 3 Bi 2 . Compared to the undoped sample, a nearly three-times enhancement in ZT was achieved at 300 K for Mg 3 Bi 1.99 Se 0.01 , which can be attributed to the significantly increasing power factor (PF). The PF increased from 10 to 30 µ W cm −1 K −2 . The improved PF mainly benefited from the high Seebeck coefficient (150–160 µ V K −1 at room temperature), which resulted from band convergence induced by Se doping. To further improve the thermoelectric performance, Mg 3 Bi 1.99 Se 0.01 alloying with Mg 3 Sb 2 has been explored. The results show that band gap of alloy increased with the increasing Sb ratio. Meanwhile, the effective scattering of phonon due to Bi/Sb disorder lead to the decrease of lattice thermal conductivity. Finally, a peak ZT of 1.3 at 525 K and average ZT of 1.02 in the temperature range of 300–525 K were obtained in Mg 3.2 Bi 1.09 Sb 0.9 Se 0.01 sample." @default.
- W4288058194 created "2022-07-28" @default.
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- W4288058194 date "2022-08-25" @default.
- W4288058194 modified "2023-10-14" @default.
- W4288058194 title "Enhanced thermoelectric performance of n-type Mg<sub>3</sub>Bi<sub>2</sub>-based materials by Se doping and alloying engineering" @default.
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- W4288058194 doi "https://doi.org/10.1088/1361-6463/ac848e" @default.
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