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• W4288461305 endingPage "118211" @default.
• W4288461305 startingPage "118211" @default.
• W4288461305 abstract "Phase-change random access memory has been served as a bridge across the memory wall within the conventional von Neumann computing architecture, owing to its excellent non-volatility and rapid switching. Nitrogen doping in Ge2Sb2Te5-like phase-change materials (PCMs) was a routine method for enhancing non-volatility of amorphous phases, although sacrificing crystallization speed markedly. Here we introduced N element into Sc0.3Sb2Te3 PCM that possesses sub-nanosecond crystallization speed, trying to cope with stability/reliability issues raised by backend thermal-budget processing. However, we observed an abnormal deterioration in thermal stability of N-doped amorphous Sc0.3Sb2Te3 films. As compared to the undoped counterparts, they exhibit a weakened fragile-to-strong crossover in viscosity that gives rise to a higher atomic mobility at elevated temperatures while a less rigid vitreous network at low temperatures. Therefore, N doping leads to an accelerated crystal growth rate and a higher steady-state nucleation rate in heterogeneous manner, causing a faster crystallization, whereas the kinetic suffocation contributed by original Sc element as approaching room temperature must have been partially counteracted by N dopant. This acceleration in crystallization kinetics delivers N-doped Sc0.3Sb2Te3 as a promising candidate in working memory." @default.
• W4288461305 created "2022-07-29" @default.
• W4288461305 creator A5030139152 @default.
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• W4288461305 date "2022-10-01" @default.
• W4288461305 modified "2023-10-15" @default.
• W4288461305 title "Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping" @default.
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• W4288461305 doi "https://doi.org/10.1016/j.actamat.2022.118211" @default.
• W4288461305 hasPublicationYear "2022" @default.
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