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- W4289170228 abstract "This paper presents the direct growth of vertical graphene (VG) using a metal shield (MS)-assisted plasma-enhanced chemical vapor deposition (PECVD) method. The 300 [Formula: see text] Ar/CH 4 plasma is used to grow VG at 600 ∘ C for 30 min on a 200 mm Si wafer. Without MS, the high Ar + physical and H + chemical rate etching of plasma prevents the growth of VG. The installation of 1 MS helps reduce the etching by reducing the ions density in the lower plasma zone and allows localized growth of VG as dark spots on the Si wafer. The crystal quality of VG grown by Ar/CH 4 plasma with 1 MS is satisfyingly good with a narrow Raman I(G) peak within 36–40 cm −1 , and the thickness of individual VG leaf is few-layer graphene since I(2D)[Formula: see text](G) is [Formula: see text]. The installation of 2 MS further improves the coverage, size, and population density of VG on the Si wafer by further lowering the ions density in the lower plasma zone. Further annealing of VG at 1040 ∘ C in an Ar/H 2 /CH 4 environment can repair the carbon sp 2 but it is almost not required as the hydrogen atoms can etch the VG and reduce its coverage on a 200 mm Si wafer." @default.
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- W4289170228 date "2022-08-01" @default.
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- W4289170228 title "Modulated Ar/CH<sub>4</sub> Plasma by Metal Shield for Enhancing the PECVD Growth of Vertical Graphene" @default.
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- W4289170228 doi "https://doi.org/10.1142/s0219581x22500235" @default.
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