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• W4289204540 startingPage "2632" @default.
• W4289204540 abstract "An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered. It is shown that MOCVD growth is influenced by an additional current into the nanowires originating from group III atoms reflected from an inert substrate and the upper limit for the group III current per nanowire given by the total group III flow and the array pitch. The model fits the data on the growth kinetics of Au-catalyzed and catalyst-free III-V nanowires quite well and should be useful for understanding and controlling the MOCVD nanowire growth in general." @default.
• W4289204540 created "2022-08-01" @default.
• W4289204540 creator A5073415745 @default.
• W4289204540 date "2022-07-30" @default.
• W4289204540 modified "2023-09-30" @default.
• W4289204540 title "Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates" @default.
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• W4289204540 doi "https://doi.org/10.3390/nano12152632" @default.
• W4289204540 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/35957064" @default.
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