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• W4289656151 abstract "The Hecht equation is often used to calculate the mobility–lifetime product ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${mu } {tau }$ </tex-math></inline-formula> ) of semiconductors by assuming a uniform electric field based on the Shockley–Ramo theory. However, the Schottky contacts are usually found at high resistivity semiconductor/metal interface, leading to a nonuniform electric field inside the bulk semiconductor. We used a slice model instead of the Hecht equation to calculate the charge collection efficiency (CCE) and found that the CCE in a nonuniform field can deviate significantly from that given by the Hecht equation in a uniform field, with the difference relying heavily on the space charge distribution and the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${mu } {tau }$ </tex-math></inline-formula> value. For semiconductors with a high ionized acceptor impurity concentration of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$5,, times 10^{9}$ </tex-math></inline-formula> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−3</sup> , such as MAPbI <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , the electron <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${mu } {tau }$ </tex-math></inline-formula> value may be seriously underestimated when adopting the Hecht equation assuming a uniform field. The invalid application of the Hecht equation for a Schottky interface may be one of the possible reasons for the underestimation of electron <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${mu } {tau }$ </tex-math></inline-formula> value for p-type perovskite materials with relatively low resistivity." @default.
• W4289656151 created "2022-08-03" @default.
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• W4289656151 date "2022-09-01" @default.
• W4289656151 modified "2023-10-11" @default.
• W4289656151 title "Simulation of the Charge Collection in a Nonuniform Electric Field for MAPbI₃ Semiconductor Nuclear Detector With Schottky Contact" @default.
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• W4289656151 doi "https://doi.org/10.1109/tns.2022.3194317" @default.
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