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- W4291010249 abstract "In this work, a compact, near-hysteresis-free hydraulic pressure sensor is presented through interface engineering in a GaN chip-scale optical device. The sensor consists of a monolithic GaN-on-sapphire device responsible for light emission and detection and a multilevel microstructured polydimethylsiloxane (PDMS) film prepared through a low-cost molding process using sandpaper as a template. The micro-patterned PDMS film functions as a pressure-sensing medium to effectively modulate the reflectance properties at the sapphire interface during pressure loading and unloading. The interface engineering endows the GaN optical device with near-hysteresis-free performance over a wide pressure range of up to 0-800 kPa. Verified by a series of experimental measurements on its dynamic responses, the tiny hydraulic sensor exhibits superior performance in hysteresis, stability, repeatability, and response time, indicating its considerable potential for a broad range of practical applications." @default.
- W4291010249 created "2022-08-13" @default.
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- W4291010249 date "2022-08-11" @default.
- W4291010249 modified "2023-10-11" @default.
- W4291010249 title "Interface Engineering in Chip-Scale GaN Optical Devices for Near-Hysteresis-Free Hydraulic Pressure Sensing" @default.
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- W4291010249 doi "https://doi.org/10.1021/acsami.2c09291" @default.
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