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- W4291221000 endingPage "154559" @default.
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- W4291221000 abstract "Integrating two-dimensional ultra-wide band gap hexagonal boron nitride (h-BN) on β-Ga2O3 surface into van der Waals heterostructures is of great interest for developing novel high-power devices and optoelectronic devices because of their unique properties. The energy band alignment at the heterointerface is critical for device design, however, the band alignment of h-BN/β-Ga2O3 heterojunction has not been investigated to date. In this work, the h-BN/β-Ga2O3 heterostructure is constructed by directly growing h-BN few-layer on the β-Ga2O3 single crystal substrate using ion beam sputtering deposition method. The high-quality few-layer h-BN with the abrupt interface and smooth surface allow for the accurate determination of band alignment at the h-BN/β-Ga2O3 heterointerface by X-ray photoelectron spectroscopies. The valence and conduction band offsets are determined to be 0.47 and 1.42 eV for the h-BN/β-Ga2O3 heterostructure, respectively, with a type-Ⅱ staggered band alignment. Furthermore, the electronic structures of h-BN/β-Ga2O3 heterostructure are also investigated experimentally and theoretically. These results indicate that the h-BN/β-Ga2O3 heterostructure has great potential in (opto)electronic devices." @default.
- W4291221000 created "2022-08-13" @default.
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- W4291221000 date "2022-12-01" @default.
- W4291221000 modified "2023-10-17" @default.
- W4291221000 title "Band alignment of h-BN/β-Ga2O3 heterostructure grown via ion beam sputtering deposition" @default.
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- W4291221000 doi "https://doi.org/10.1016/j.apsusc.2022.154559" @default.
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