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- W4291910366 abstract "This paper presents the two-dimensional (2-D) numerical simulation results of heavy-ion induced reverse drain current degradation and single-event burnout (SEB) in the 1.2-kV rated CoolSiC Trench metal-oxide-semiconductor field-effect transistor (MOSFET). The physics models employed in simulations and critical failure conditions were validated by the heavy-ion irradiation experiments of the commercially available 1.2-kV rated SiC planar-gate MOSFET devices. The CoolSiC Trench MOSFET was proven to behave comparative SEB performance compared with the SiC planar-gate MOSFET. The robustness of the CoolSiC Trench MOSFET with different single buffer layer (SBL) designs against a heavy ion was simulated. Furthermore, the SBL-CoolSiC Trench MOSFET with low carrier lifetime control was investigated. According to the simulation results, the severe degeneration failure tolerance increased to 800 V; the SEB failure tolerance could reach 900 V." @default.
- W4291910366 created "2022-08-16" @default.
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- W4291910366 date "2022-12-01" @default.
- W4291910366 modified "2023-09-29" @default.
- W4291910366 title "Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET" @default.
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- W4291910366 doi "https://doi.org/10.1109/tdmr.2022.3194706" @default.
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