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- W4292829601 abstract "The technological importance of ALD (atomic layer deposition) process in the semiconductor business is more evident than ever before as the device structures become more and more challenging to deposit with various thin films. Therefore, it is highly beneficial to have more capable ALD equipment in the semiconductor manufacturing. The performance of a newly designed dual single-chamber ALD system has been evaluated by examination of basic process results obtained with the system. Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> film was selected for the process characterization with the ALD chamber. The ALD growth linearity, and pulse-and-purge saturation behavior were evaluated. The degree of ALD saturation was also confirmed by step coverage test." @default.
- W4292829601 created "2022-08-24" @default.
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- W4292829601 date "2022-06-20" @default.
- W4292829601 modified "2023-09-28" @default.
- W4292829601 title "ALD Characteristic Study of Al<sub>2</sub>O<sub>3</sub> Film Deposited by a Dual Single-Wafer Process Chamber" @default.
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- W4292829601 doi "https://doi.org/10.1109/cstic55103.2022.9856923" @default.
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