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- W4292968959 abstract "We predict improved electrostatic fields in a <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$beta $ </tex-math></inline-formula> -Ga2O3trench metal–insulator–semiconductor (MIS) Schottky barrier diode (SBD) by integrating a bilayer dielectric as the insulator layer. The bilayer leverages the benefits offered by a high- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${K}$ </tex-math></inline-formula> /low- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${K}$ </tex-math></inline-formula> dielectric arrangement to obtain lower gate leakage as well as alleviated peak fields compared with a stand-alone dielectric insulator. Through detailed 2-D simulations of geometrically optimized MIS trench SBDs, electrostatic engineering of the bilayer dielectric device is performed to predict better breakdown characteristics and the initiation of impact ionization, which is a measure of the intrinsic capability of the material, at comparatively higher doping of the drift layer, as well as a higher power figure-of-merit (FoM; ≈4 GW/cm2) compared with single-layer dielectric insulators." @default.
- W4292968959 created "2022-08-24" @default.
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- W4292968959 date "2022-10-01" @default.
- W4292968959 modified "2023-09-25" @default.
- W4292968959 title "Electrostatic Engineering of β-Ga<sub>2</sub>O<sub>3</sub> Trench Metal–Insulator–Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack" @default.
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- W4292968959 doi "https://doi.org/10.1109/ted.2022.3198633" @default.
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