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• W4293053150 endingPage "10366" @default.
• W4293053150 startingPage "10359" @default.
• W4293053150 abstract "Several atomic layer deposition (ALD) processes are now known that leverage the distinct surface chemistry of two disparate substrates (e.g., metal vs oxide) to realize markedly different ALD nucleation rates in an approach referred to as area-selective ALD. In contrast, few ALD processes have been identified that allow selective reaction at distinct surface sites of a single material surface, in a process that might be called site-selective ALD (SS-ALD). We describe one potential strategy to discriminate among several distinct surface sites on bixbyite In2O3 to achieve site selectivity. Using density functional theory, we predict the discriminant hydration and hydroxylation of In2O3 terrace and step-edge sites that depend strongly on the substrate temperature at low water coverage. Infrared measurement of surface hydroxyls on In2O3 nanoparticles supports the predicted temperature dependence. The in situ examination of MgO ALD nucleation also shows results consistent with the predicted temperature dependence of In2O3 hydroxylation. Together, these findings suggest that a selective hydroxylation approach may be a viable route to SS-ALD on In2O3." @default.
• W4293053150 created "2022-08-25" @default.
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• W4293053150 date "2022-06-14" @default.
• W4293053150 modified "2023-10-17" @default.
• W4293053150 title "Selective Hydroxylation of In₂O₃ as A Route to Site-Selective Atomic Layer Deposition" @default.
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• W4293053150 doi "https://doi.org/10.1021/acs.jpcc.2c01311" @default.
• W4293053150 hasPublicationYear "2022" @default.
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