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- W4293082105 abstract "The dependence of the energy of the relative electron-hole motion in an exciton on the magnitude of applied electric field for various thicknesses of an ideal flat semiconductor plate is theoretically calculated. It is shown that the variation of the plate thickness significantly affects the dependence of the energy on the electric field. The effect should be observed in plates whose thickness exceeds the Bohr exciton radius by two orders of magnitude." @default.
- W4293082105 created "2022-08-26" @default.
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- W4293082105 date "2022-01-01" @default.
- W4293082105 modified "2023-10-05" @default.
- W4293082105 title "Энергия относительного движения электрона и дырки в экситоне во внешнем электрическом поле в пластине GaAs" @default.
- W4293082105 doi "https://doi.org/10.21883/ftt.2022.11.53317.303" @default.
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