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- W4293144806 abstract "This letter reports the first controlled experimental study on the impact of charge-balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes (SHJ-SBD). Charge balance between p- and n-type doped GaN for reducing peak E-field can be optimized via charge-balance etching (CBE) of the p-GaN SHJ region to improve dynamic <inline-formula> <tex-math notation=LaTeX>${R}_{textit {ON}}$ </tex-math></inline-formula> degradation and breakdown voltage (BV). Three CBE conditions were fabricated with the same process on a single epitaxial wafer to mitigate process dependent variation. Charge-balance varied from donor-rich (thinner p-GaN) to near-optimum charge-balance condition, which enabled excellent dynamic <inline-formula> <tex-math notation=LaTeX>${R}_{textit {ON}}$ </tex-math></inline-formula> degradation of 16.9% at 3 kV and BV greater than 10 kV without field plate. TCAD simulation reinforces understanding showing CBE effect on E-Field redistribution and reduced peak E-field." @default.
- W4293144806 created "2022-08-27" @default.
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- W4293144806 date "2022-05-01" @default.
- W4293144806 modified "2023-09-25" @default.
- W4293144806 title "Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes" @default.
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- W4293144806 doi "https://doi.org/10.1109/led.2022.3163236" @default.
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