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- W4293249225 abstract "A selective Si 3 N 4 etching is required in the semiconductor manufacturing process. In general, Si 3 N 4 was selectively etched to SiO 2 in hot H 3 PO 4 . However, since the existing Si 3 N 4 etching process used a high-temperature and high-concentration acid solution, environment, health, and safety issues may occur. In this study, a new Si 3 N 4 etching process based on superheated water was studied. In superheated water, Si 3 N 4 was etched, but also Si and SiO 2 were etched, making it difficult to apply to actual Si 3 N 4 etching process. By adding carboxylic acid to superheated water, Si 3 N 4 was selectively etched without material loss of Si and SiO 2 in a Si 3 N 4 /SiO 2 repeated stack structure. The Si 3 N 4 etching process using superheated water with addition of carboxylic acid is an eco-friendly, safe and new etching process that can solve various problems that may occur in the existing H 3 PO 4 process." @default.
- W4293249225 created "2022-08-27" @default.
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- W4293249225 date "2022-05-20" @default.
- W4293249225 modified "2023-10-18" @default.
- W4293249225 title "Si3N4 Etching with Carboxylic-Acid-Containing Superheated Water" @default.
- W4293249225 doi "https://doi.org/10.1149/10804.0161ecst" @default.
- W4293249225 hasPublicationYear "2022" @default.
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