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- W4293253918 abstract "Due to the difficulty in controlling the post-selenization/sulfurization process accurately, single-graded structure with a lower bandgap on the surface is easy to form in the Cu 2 ZnSn(S, Se) 4 absorber. This will lower the built-in potential and lead to the formation of undesirable “cliff” type band alignment in the device, and hence a drastic V oc -deficit and lower efficiency are expected. Herein, an effective and versatile method to improve the V oc and efficiency of Cu 2 ZnSn(S, Se) 4 solar cells through bandgap engineering was presented in this work. A sharp surface bandgap gradient with larger surface bandgap was constructed simply by sputtering a nanoscale Cu 2 ZnSnS 4 layer on the surface of Cu 2 ZnSn(S, Se) 4 absorber. Under the coactions of surface sharp bandgap gradient and the single bandgap gradient existed in the Cu 2 ZnSn(S, Se) 4 absorber naturally, a quasi-U-shaped bandgap gradient was constructed inside the absorber. Benefited from the enlarged surface bandgap, favorable U-shaped bandgap gradient and appropriate band alignment at the absorber/buffer interface, a best efficiency of 9.9% with a V oc of 450 mV, a J sc of 35.26 mA/cm 2 and a fill factor (FF) of 62.73% was achieved. • Improving the V oc and efficiency of CZTSSe device by bandgap engineering. • Sharp surface bandgap gradient construction. • Formation of quasi-U-shaped bandgap gradient in the CZTSSe absorber. • Appropriate band alignment between CZTSSe/CdS heterointerface." @default.
- W4293253918 created "2022-08-27" @default.
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- W4293253918 date "2022-07-01" @default.
- W4293253918 modified "2023-10-16" @default.
- W4293253918 title "Nanoscale sharp bandgap gradient for efficiency improvement of Cu2ZnSn(S, Se)4 thin film solar cells" @default.
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- W4293253918 doi "https://doi.org/10.1016/j.jallcom.2022.164665" @default.
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