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• W4293325579 abstract "Abstract SmFeO 3 has received the increasing scientific attention as a promising room‐temperature single‐phase multiferroic material with great application potential in the next‐generation spintronic devices. However, the ferroelectricity of SmFeO 3 has remained as a controversial issue. In the present work, high resistivity incipient ferroelectric CaTiO 3 was introduced as a charge blocking layer on an SmFeO 3 thin film to suppress the leakage current. CaTiO 3 /SmFeO 3 /Nb–SrTiO 3 (1 0 0) thin films were prepared by a PLD (pulsed laser deposition) process, and the epitaxial growth of thin films was confirmed by XRD (X‐ray diffraction) and HRTEM (high resolution transmission electron microscope) images. The interface strain resulted in the polar non‐centrosymmetry in space group P 4 2 / mc for SmFeO 3 , and subsequently the room‐temperature ferroelectricity was achieved with a robust remanent polarization of about 4.9 μC/cm 2 . The 180° switchable domain structure was confirmed by PFM (piezoelectric force microscope). Meanwhile, strong magnetoelectric coupling with magnetoelectric coefficient ( α ME ) of about 2.5 V/(cm Oe) was observed. The present work has revealed the structural origin of ferroelectricity in an SmFeO 3 thin film and provided the great reference for its room temperature multiferroic applications." @default.
• W4293325579 created "2022-08-27" @default.
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• W4293325579 date "2022-09-02" @default.
• W4293325579 modified "2023-10-15" @default.
• W4293325579 title "Robust room‐temperature ferroelectricity and magnetoelectric coupling effect in epitaxial CaTiO₃/SmFeO₃ thin films" @default.
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• W4293325579 doi "https://doi.org/10.1111/jace.18736" @default.
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