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- W4293490445 abstract "Present entire world depended on digital technology. From taking food of the humans to their health condition monitor by using digital devices. Now a days mobile phone is became as daily usage thing for every human. In digital devices for storing of past data for future reference purpose need memory unit. The Static Random Access Memories plays a powerful role in digital world. Designing of low power SRAM is a complex task now days. The Stability is the very important characteristic to describe the effectiveness of SRAM cell. The Read stability and Write ability of SRAMs describe by using Static Noise Margin. The conventional 6T SRAM suffering with stability problem because read and write operations are directly accessed with BL and BL_Bar pins. For improving read stability and write ability use an extra transistor in design of SRAM. The 7T SRAM has better stability than compare to the conventional 6T SRAM." @default.
- W4293490445 created "2022-08-29" @default.
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- W4293490445 date "2022-08-30" @default.
- W4293490445 modified "2023-09-29" @default.
- W4293490445 title "Comparison of Read Stability and Write Ability of Low Power Nanometric SRAMs" @default.
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- W4293490445 doi "https://doi.org/10.1007/978-981-19-2538-2_12" @default.
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