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• W4293555981 abstract "We study the critical thickness for the plastic relaxation of the Si quantum well layer embedded in a SiGe/Si/SiGe heterostructure for qubits by plan-view transmission electron microscopy and electron channeling contrast imaging. Misfit dislocation segments form due to the glide of pre-existing threading dislocations at the interface of the Si quantum well layer beyond a critical thickness given by the Matthews–Blakeslee criterion. Misfit dislocations are mostly 60° dislocations (b=a/2 &lt;110&gt;) that are split into Shockely partials (b=a/6 &lt;112&gt;) due to the tensile strain field of the Si quantum well layer. By reducing the quantum well thickness below critical thickness, misfit dislocations can be suppressed. A simple model is applied to simulate the misfit dislocation formation and the blocking process. We discuss consequences of our findings for the layer stack design of SiGe/Si/SiGe heterostructures for usage in quantum computing hardware." @default.
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• W4293555981 date "2022-08-28" @default.
• W4293555981 modified "2023-09-26" @default.
• W4293555981 title "Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits" @default.
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• W4293555981 doi "https://doi.org/10.1063/5.0101753" @default.
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