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- W4293868521 abstract "We examine the influence of scaling the GaN channel thickness from 100nm to 35nm on the RF performance for GaN HEMTs on Si with a cGaN back-barrier with gate lengths ranging from 70nm to 190nm. Thinner GaN channels notably improve the short channel effects. However, there is a degradation in the on-state performance associated with an increase in dispersion. These trade-offs translate to a ~33%, ~20% decline in <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$f_{mathrm{T}}, f_{text{MAX}}$</tex> respectively, for 70nm devices. While the large-signal metrics, PSAT and PAE, at 6GHz drop by ~46% and ~18%, respectively. We also consider the lateral downscaling of the gate-to-drain and gate-to-source spacings, which proves beneficial in boosting PSAT, up to 3.4W/mm, by increasing the extrinsic transconductance by ~20%." @default.
- W4293868521 created "2022-09-01" @default.
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- W4293868521 date "2022-06-19" @default.
- W4293868521 modified "2023-10-14" @default.
- W4293868521 title "Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier" @default.
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- W4293868521 doi "https://doi.org/10.1109/ims37962.2022.9865258" @default.
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