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- W4294328450 abstract "Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties as performance killers, as a very small density of states in graphene might suppress the current injection from metal to graphene. This paper systematically reviews the metal/graphene contact properties and discusses the present status and future requirements of the specific contact resistivity." @default.
- W4294328450 created "2022-09-02" @default.
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- W4294328450 date "2011-04-10" @default.
- W4294328450 modified "2023-09-26" @default.
- W4294328450 title "DOS-limited contact resistance in graphene FETs" @default.
- W4294328450 doi "https://doi.org/10.48550/arxiv.1104.1818" @default.
- W4294328450 hasPublicationYear "2011" @default.
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