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- W4294338263 abstract "Ultrahard WB 4 -B and WB 4 -TaB 2 based materials have been obtained by applying glass encapsulated HIPing to mixtures comprised of WB 4 and free boron with and without metallic tantalum additions. Porosity removal is more efficient in the alloy containing metallic tantalum, achieving near full density at temperatures 300 °C lower than those reported so far for these materials. The WB 4 phase is better stabilished by HIPing at 1350 °C than at 1100 °C. This is due to the formation of TaB 2 , which, at 1100 °C, likely occurs by direct reaction between metallic Ta and the surrounding WB 4 particles. At 1350 °C, diffusion is enhanced and the reaction between free B and Ta particles becomes more probable. The hardness of hipped specimens ranges from 43 GPa to 24 GPa depending on the applied load. K 1c values calculated from indentation cracks reach 5.6 MPa.m 1/2 , assuming Palmqvist type crack shape. • Ultrahard WB4 and WB4-TaB2 based materials have been obtained by glass encapsulated HIPing. • Densification is enhanced by adding metallic Ta powders reaching near full density after HIPing at 1350 °C and 150 MPa for 1 h. • Metallic Ta powders react preferentially with WB 4 or free boron particles depending on the HIP temperature. • Direct reaction between Ta and WB 4 is dominant at 1100 °C, whereas that occurring between Ta and B is promoted at 1350 °C. This phenomenon is due to kinetic effects. • Hardness values range from 43 GPa to 24 GPa, depending on the applied load. K 1c values calculated from indentation cracks reach 5 MPa.m 1/2" @default.
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- W4294338263 date "2022-12-01" @default.
- W4294338263 modified "2023-09-28" @default.
- W4294338263 title "Hot isostatic pressing of WB4 and WB4-TaB2 based ultrahard materials" @default.
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- W4294338263 doi "https://doi.org/10.1016/j.ijrmhm.2022.105965" @default.
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